AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from the [ital n]=2 quantum well transition
Journal Article
·
· Applied Physics Letters; (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States) Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
- Center for High Technology Materials, and Department of Electrical and Computer Engineering University of New Mexico, Albuquerque, New Mexico 87131-6081 (United States)
We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry--Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the [ital n]=1 and [ital n]=2 quantum well gain peaks at [similar to]670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5734878
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:25; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
AMPLIFICATION
ELECTRONIC STRUCTURE
ENERGY-LEVEL TRANSITIONS
FABRICATION
FABRY-PEROT INTERFEROMETER
GAIN
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFEROMETERS
JUNCTIONS
LASERS
MEASURING INSTRUMENTS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
VISIBLE SPECTRA
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
AMPLIFICATION
ELECTRONIC STRUCTURE
ENERGY-LEVEL TRANSITIONS
FABRICATION
FABRY-PEROT INTERFEROMETER
GAIN
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFEROMETERS
JUNCTIONS
LASERS
MEASURING INSTRUMENTS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
VISIBLE SPECTRA