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AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from the [ital n]=2 quantum well transition

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.110128· OSTI ID:5734878
 [1]; ;  [2];  [3]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States) Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
  3. Center for High Technology Materials, and Department of Electrical and Computer Engineering University of New Mexico, Albuquerque, New Mexico 87131-6081 (United States)

We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry--Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the [ital n]=1 and [ital n]=2 quantum well gain peaks at [similar to]670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
5734878
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:25; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English