Gain mechanism of the vertical-cavity surface-emitting semiconductor laser

Journal Article · Mon Oct 22 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104046· OSTI ID:6176696

Deppe, D G ^[1]

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1. Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084 (USA)

The vertical-cavity surface-emitting single quantum well laser is examined in terms of the short Fabry--Perot cavity's effect on optical gain. It is suggested that for this vertical- cavity structure the optical gain mechanism is fundamentally altered as compared to the case of the more standard edge-emitting device with longer cavity lengths. The short cavity and highly reflecting mirrors of the vertical cavity structure lead to an enhanced gain coefficient at fixed carrier densities, due to enhanced spontaneous emission into the Fabry--Perot modes of the optical cavity, and the resultantly reduced spontaneous linewidth.

• OSTI ID: 6176696
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:17; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
CARRIER DENSITY
FABRICATION
GAIN
LASER CAVITIES
LASER MIRRORS
LASERS
LINE WIDTHS
MIRRORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS