Bottom emitting vertical-cavity surface-emitting lasers

Patent · Tue May 14 04:00:00 UTC 2019

OSTI ID:1568348

Mathai, Sagi Varghese; Cheung, Stanley; Sorin, Wayne V.; Tan, Michael Renne Ty

A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure includes a first substrate permitting the passage of light therethrough, an n-doped distributed Bragg reflector (nDBR), a p-doped distributed Bragg reflector (pDBR), one or more active layers, at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror, and a plurality of layers, where the VCSEL structure is configured to be flip chipped to a second substrate. The pDBR and the nDBR define a laser cavity extending vertically therebetween and containing the one or more active layers. The at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror may be disposed over the pDBR. The plurality of layers may be disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC52-07NA27344
• Assignee: Hewlett-Packard Enterprise Development LP (Houston, TX)
• Patent Number(s): 10,290,996
• Application Number: 15/962,649
• OSTI ID: 1568348
• Country of Publication: United States
• Language: English

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