AlGaInP visible resonant cavity light-emitting diodes

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.219692· OSTI ID:6300407

Lott, J A; Schneider, Jr, R P; Zolper, J C ^[1]; Malloy, K J ^[2]

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1. Sandia National Lab., Albuquerque, NM (United States)
2. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials, and Dept. of Electrical and Computer Engineering

Visible (670 nm) resonant cavity light-emitting diodes (RCLED's) composed entirely of AlGaInP alloys are reported. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBR's). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6300407
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 5:6; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ALLOYS
ALUMINIUM ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
DESIGN
DOPED MATERIALS
EPITAXY
FABRICATION
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ALLOYS
LIGHT EMITTING DIODES
MATERIALS
MIRRORS
OPTICAL PROPERTIES
PHOSPHORUS ADDITIONS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
REFRACTIVE INDEX
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUBSTRATES
USES