Thermal stability of electrically active dopants in laser annealed silicon films

Journal Article · Thu Sep 01 04:00:00 EDT 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332768· OSTI ID:5728986

Wilson, S R; Paulson, W M; Gregory, R B; Tam, G; White, C W; Appleton, B R; Rai, A K; Pronko, P P

Single crystal Si wafers and polycrystalline Si films on Si/sub 3/N/sub 4/ have been implanted with large doses (1 x 10/sup 15//cm/sup 2/--4 x 10/sup 16//cm/sup 2/) of P or As and laser annealed with either a cw or pulsed laser. The samples were then subjected to thermal anneals between 450 and 900 /sup 0/C to determine the thermally stable dopant concentration for each sample. Sheet resistance and Hall measurements have been used to measure the electrical properties in each case. SIMS, RBS, and TEM have been used to measure atomic profiles, As substitutionality and residual defects after laser and thermal annealing. In each case the maximum electrically active dopant concentration achieved by laser annealing decreased after a 700--800 /sup 0/C thermal anneal.

• Research Organization: Semiconductor Research and Development Laboratories, Motorola, Incorporated, 5005 E. McDowell Road, Phoenix, Arizona 85008
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5728986
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC IONS
CHARGED PARTICLES
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
HALL EFFECT
HEAT TREATMENTS
HEATING
HIGH TEMPERATURE
ION IMPLANTATION
IONS
LASER-RADIATION HEATING
MONOCRYSTALS
NITRIDES
NITROGEN COMPOUNDS
PHOSPHORUS IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PLASMA HEATING
PNICTIDES
POLYCRYSTALS
PULSES
RADIATION EFFECTS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
THIN FILMS
VERY HIGH TEMPERATURE