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U.S. Department of Energy
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High temperature, bonded titanium diboride sputter target

Technical Report ·
OSTI ID:5726307
A high-temperature bonding technique has been employed in the development of an improved sputter deposition target for hard, crack-prone materials such as titanium diboride (TiB/sub 2/). Titanium diboride was bonded to a thin metal backing plate, both materials having a similar linear coefficient of thermal expansion (LCTE) using a high-temperature braze alloy. The thin metal backing plate helps stabilize the movement of the target material during the sputter deposition operation. The bonded sputter target has a useable life of 50 to 75 times that of a unbonded target. This bonding technique may be used on a variety of hard, brittle, crack-prone, sputterable materials (including metal oxides, carbides borides, and nitrides). US Patent 4,209,375 has been issued as a result of this endeavor.
Research Organization:
Bendix Corp., Kansas City, MO (USA)
DOE Contract Number:
AC04-76DP00613
OSTI ID:
5726307
Report Number(s):
BDX-613-2661; ON: DE82002687
Country of Publication:
United States
Language:
English