Interelement coupling in gain-guided diode laser arrays

Journal Article · Mon Jun 02 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96901· OSTI ID:5725186

Hohimer, J P; Hadley, G R; Owyoung, A

Below-threshold studies of an injection-locked gain-guided diode laser array show a far-field emission pattern with several lobes whose angular widths decrease with increasing frequency of the injected radiation. The concurrent increase in the far-field emission angle with the frequency of the injected radiation provides strong evidence that the interelement coupling in a gain-guided diode laser array depends upon the tilt of the wave front in the array cavity. These results provide insight into the coupling mechanism that dominates gain-guided array behavior and strongly suggest that these devices should be viewed as perturbed broad-area devices in which plane waves are undergoing multiple reflections between facets. This contrasts sharply with the coupled-mode picture, which is more appropriate for index-guided arrays.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5725186
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:22; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
COUPLING
ENERGY
FREQUENCY SELECTION
LASER CAVITIES
LASERS
MODE LOCKING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY
WAVEGUIDES