Pulsed laser-induced SEU in integrated circuits; A practical method for hardness assurance testing
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:5722132
- Martin Marietta Labs., Baltimore, MD (USA)
- Naval Research Lab., Washington, DC (USA)
- Harris Corp., Melbourne, FL (USA). Semiconductor Sector
The authors have used a pulsed picosecond laser to measure the threshold for single event upset (SEU) and single event latchup (SEL) for two different kinds of integrated circuits. The relative thresholds show good agreement with published ion upset data. The consistency of the results together with the advantages of using a laser system suggest that the pulsed laser can be used for SEU/SEL hardness assurance of integrated circuits.
- OSTI ID:
- 5722132
- Report Number(s):
- CONF-900723--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 37:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
ENERGY
HARDENING
INTEGRATED CIRCUITS
LASERS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
PULSES
RADIATION EFFECTS
RADIATION HARDENING
THRESHOLD ENERGY
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
ENERGY
HARDENING
INTEGRATED CIRCUITS
LASERS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
PULSES
RADIATION EFFECTS
RADIATION HARDENING
THRESHOLD ENERGY