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Highly reliable epitaxial YBaCuO thin-films using pressure-controlled magnetron sputtering method

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5721160
; ; ;  [1]
  1. Osaka Univ., Toyonaka (Japan). Faculty of Engineering Science
The authors of this article ensure the reliability of the epitaxial YBaCuO films by a new sputtering technique. The authors' film (100 nm thick and no protection) showed no sign of degradation in its Tc value till this moment ({approximately}3000 hrs). Under the controlled discharge gas pressure, the in situ epitaxial YBaCuO film had Tc of 87 K. The c-axis lattice constants and the critical temperatures became very close to the bulk values as the pressure was going up to 1 Torr. The plasma emission spectra showed a reduction in the Ar spectrum intensities relative to the oxygen component with increasing pressure. This observation suggests that the reduced mean free path of the gas atoms is responsible for the improved film crystallinity and superconductivity.
OSTI ID:
5721160
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English

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