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Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Third quarterly progress report, July 1-September 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5718964· OSTI ID:5718964
Using quartz, sapphire and stainless steel substrates, hydrogenated a-Si films have been prepared by ion-plating techniques through a 1000 to 2000 volt hydrogen glow. The highest hydrogen content to date has been 18 a/o in a film evaporated in partial pressure of 55 ..mu.. of hydrogen. Optical band gaps of these films varied from 1.67 eV to 2.21 eV. Films made on sapphire substrates were used in IR-spectroscopy measurement; they had a doublet absorption peak at approximately 2000 cm/sup -1/ corresponding to SiH bond stretching.
Research Organization:
Duke Univ., Durham, NC (USA). Dept. of Mechanical Engineering and Materials Science
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-79ET23041
OSTI ID:
5718964
Report Number(s):
DOE/ET/23035-3
Country of Publication:
United States
Language:
English