{sup 15}N hydrogen profiling of IC metallizations
Conference
·
OSTI ID:57154
The 6.4 MeV p({sup l5}N,{alpha}{gamma}){sup 12}C resonant nuclear reaction has been used to investigate the role of hydrogen as a contributing factor in the formation of stress-induced voids in very large scale integrated circuit metallizations. Hydrogen profiles were measured from a series of layered structures consisting of aluminum-copper alloy metallizations deposited on borophosphosilicate glass and capped with a variety of commercial passivation materials in order to examine differences in the concentrations and depth distributions of hydrogen within the layered structures.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 57154
- Report Number(s):
- SAND--95-0762C; CONF-950220--9; ON: DE95011052
- Country of Publication:
- United States
- Language:
- English
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