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Current carrying properties of the HIP treated Mo-sheath PbMo sub 6 S sub 8 wires

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5715357
; ; ;  [1]
  1. Electrotechnical Lab., MITI, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305 (JP)
This paper reports that although the critical current density (J{sub c}) over 2 {times} 10{sup 6} A/m{sup 2} (8 T) is obtained for Mo-sheathed PbMo{sub 6}S{sub 8} wires annealed at 700{degrees} C, the microstructure of PbMo{sub 6}S{sub 8} is very porous and J{sub c} measured with a magnetic field parallel to the current, J{sub c} ({parallel}), is only 0--10% higher than J{sub c} measured with a field perpendicular to the current, J{sub c}({perpendicular}). The transport current flows percolatively in PbMo{sub 6}S{sub 8} of those wires. Remarkable J{sub c} enhancement was observed for the wires HIP (hot isostatic pressing) treated at 1200{degrees} C:J{sub c} {gt} 3 {times} 10{sup 8} A/m{sup 2} (8 T) has frequently been observed and the best value was J{sub c} = 2.2 {times} 10{sup 8} A/m{sup 2} (18 T) and 9.3 {times} 10{sup 7} A/m{sup 2} (23 T).
OSTI ID:
5715357
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English