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Poor intergrain connectivity of PbMo sub 6 S sub 8 in sintered Mo-sheathed wires and the beneficial effect of hot-isostatic-pressing treatments on the transport critical current density

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.349525· OSTI ID:5557965
; ; ;  [1]; ;  [2]
  1. Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan (JP)
  2. University of Wisconsin-Madison, 1500 Johnson Drive, Madison, Wisconsin 53706 (USA)
The microstructure of Mo-sheathed Chevrel-phase superconducting wires was investigated by high-resolution scanning electron microscopy (SEM). Excess Pb forms small nodules (10--30 nm) on the Chevrel-phase grains or wetting layers between the Chevrel grains. The critical current density {ital J}{sub {ital c}} is strongly reduced when wetting layers are present. However, second-phase Mo exists as islands as large as 2--10 {mu}m and has little harmful effect on {ital J}{sub {ital c}}. Although some Mo-sheathed wires sintered at 700 {degree}C show relatively high {ital J}{sub {ital c}} ( {ge} 2 {times} 10{sup 8} A/m{sup 2} at 8 T), the Chevrel phase in these wires has a very porous microstructure, and the {ital J}{sub {ital c}} values measured with a magnetic field parallel to the current, {ital J}{sub {ital c}}({parallel}), were only about 10% higher than the {ital J}{sub {ital c}} values measured with a field perpendicular to the current, {ital J}{sub {ital c}}({perpendicular}). This clearly suggests that the transport current flows percolatively in these wires. Much denser microstructures were obtained by hot-isostatic-pressing (HIP) treatments at 1200 {degree}C, and very high {ital J}{sub {ital c}} values, {gt} 5 {times} 10{sup 8} A/m{sup 2} at 8 T and 9.3 {times} 10{sup 7} A/m{sup 2} at 23 T, which are of the order of the highest {ital J}{sub {ital c}} values so far reported, were observed. High-resolution SEM observations of HIP'ed wires demonstrate that the interconnectivity between the Chevrel grains was much improved.
OSTI ID:
5557965
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 70:3; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English