A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S
Data are presented for the CD4000 family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to low dose-rate ionizing radiation than that observed with ''conventional rate'' (approximately 10/sup 6/ rad(Si)/hr) /sup 60/Co testing. Data obtained using conventional rate /sup 60/Co irradiations followed by either a 24-hour, high-temperature (100/sup 0/C) anneal or a 65-day, room temperature anneal are in good agreement with data obtained by exposing similar parts at a low dose-accumulation rate (daily 17second, 5000 rad(Si) exposures) for 200 consecutive days. Graphs of thresholds, output drive, and propagation delay for both low doseaccumulation rate and conventional rate exposures are included.
- Research Organization:
- Sandia National Laboratories, Electromagnetic Applications Division 2322, Albuquerque, NM 87185
- OSTI ID:
- 5711908
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
ANNEALING
COBALT 60
DOSE RATES
EXPERIMENTAL DATA
GRAPHS
IONIZING RADIATIONS
IRRADIATION
MEDIUM TEMPERATURE
MOS TRANSISTORS
PERFORMANCE TESTING
SILICON
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT ISOTOPES
DATA
ELECTRONIC CIRCUITS
ELEMENTS
HEAT TREATMENTS
INFORMATION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SEMIMETALS
TESTING
TRANSISTORS
YEARS LIVING RADIOISOTOPES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems