A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S
Journal Article
·
· IEEE Trans. Nucl. Sci.; (United States)
Data are presented for the CD4000 family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to low dose-rate ionizing radiation than that observed with ''conventional rate'' (approximately 10/sup 6/ rad(Si)/hr) /sup 60/Co testing. Data obtained using conventional rate /sup 60/Co irradiations followed by either a 24-hour, high-temperature (100/sup 0/C) anneal or a 65-day, room temperature anneal are in good agreement with data obtained by exposing similar parts at a low dose-accumulation rate (daily 17second, 5000 rad(Si) exposures) for 200 consecutive days. Graphs of thresholds, output drive, and propagation delay for both low doseaccumulation rate and conventional rate exposures are included.
- Research Organization:
- Sandia National Laboratories, Electromagnetic Applications Division 2322, Albuquerque, NM 87185
- OSTI ID:
- 5711908
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparison of conventional /sup 60/Co testing and very low dose-rate irradiation of metal-gate CMOS ICs
Using laboratory x-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
Combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on CMOS APS image sensors
Conference
·
Sat Dec 31 23:00:00 EST 1983
·
OSTI ID:6984753
Using laboratory x-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
Conference
·
Wed Nov 30 23:00:00 EST 1988
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:6283997
Combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on CMOS APS image sensors
Journal Article
·
Sat Feb 14 23:00:00 EST 2015
· AIP Advances
·
OSTI ID:22454457
Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
DATA
DOSE RATES
ELECTRONIC CIRCUITS
ELEMENTS
EXPERIMENTAL DATA
GRAPHS
HEAT TREATMENTS
INFORMATION
INTEGRATED CIRCUITS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MEDIUM TEMPERATURE
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TESTING
TRANSISTORS
YEARS LIVING RADIOISOTOPES
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
DATA
DOSE RATES
ELECTRONIC CIRCUITS
ELEMENTS
EXPERIMENTAL DATA
GRAPHS
HEAT TREATMENTS
INFORMATION
INTEGRATED CIRCUITS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MEDIUM TEMPERATURE
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TESTING
TRANSISTORS
YEARS LIVING RADIOISOTOPES