Comparison of conventional /sup 60/Co testing and very low dose-rate irradiation of metal-gate CMOS ICs
Data are presented for one family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to very low dose-rate ionizing radiation than that predicted by conventional-rate (approximately 10/sup 6/ rads(Si)/hr) /sup 60/Co testing. Data obtained using the conventional rate /sup 60/Co irradiations followed by either a 24 hour, high-temperature (100/sup 0/C) or 65 day room temperature anneal are in good agreement with data obtained by exposing similar parts at a very low dose accumulation rate (5000 rads(Si)/day) for 200 consecutive days. The similarity between these findings and the rebound phenomena is described, and the implications of these findings for space and other low dose-rate applications is discussed. A simple test procedure for identifying low dose-rate annealing, or rebound, and its recovery time is proposed. Graphs of thresholds, output drive, and propagation delay versus low dose-rate and conventional-rate dose accumulation are included.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6984753
- Report Number(s):
- SAND-84-1335C; CONF-840712-8; ON: DE84014986
- Country of Publication:
- United States
- Language:
- English
Similar Records
An improved standard total dose test for CMOS space electronics
Combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on CMOS APS image sensors
Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
TESTING
YEARS LIVING RADIOISOTOPES