Process-induced defects in solar cell silicon

Journal Article · Mon Jul 01 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335716· OSTI ID:5701706

Gleichmann, R; Cunningham, B; Ast, D G

The microstructure of as-grown and processed, edge-defined film-fed grown, silicon ribbons was studied in order to identify the basic mechanisms responsible for the change of the as-grown defect structure during processing at elevated temperatures. The short heat treatment required to diffuse the p-n junction was sufficient to cause heterogeneous precipitation of impurity atoms, particularly transition metals. In addition, an elastic recovery of the ribbon occurred by dislocation glide, resulting in the formation of a polygonizationlike structure of sub boundaries in the base. Mechanism are suggested by which twin boundaries, acting as dislocation obstacles, can concentrate the relatively low average dislocation densities typical of edge-defined film-fed grown ribbons (10/sup 4/ cm/sup -2/ to 10/sup 8/ cm/sup -2/) to values which are sufficient to induce the formation of subgrainlike boundary structures.

• Research Organization: Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
• DOE Contract Number: AC02-76ER02899
• OSTI ID: 5701706
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
EQUIPMENT
HEAT TREATMENTS
IMPURITIES
JUNCTIONS
LINE DEFECTS
MICROSTRUCTURE
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT