HgCdTe surface and defect study program. Final report, 1 July 1985-2 March 1986
Technical Report
·
OSTI ID:5698739
Enhanced doping density within 250A of the passivated interface of Hg(0.7)Cd(0.3)Te (PHO-TOX-SiO/sub 2/ and anodic oxide) were measured using capacitance-voltage techniques. Detailed doping profiles in channeled implants in Hg(0.7)Cd(0.3)Te show that nuclear damage is the dominant mechanism causing damage-induced donor levels with profiles similar to those expected for unoriented implants. Implant atomic profiles are presented for a variety of ions. The role of the weak Hg bond is discussed in forming interfaces with Ag, Cu and A1. CdTe band structure is calculated using a nonlocal pseuo-potential and the results are used to interpret angle-resolved photoemission spectroscopy results on HgCdTe. Dislocation energies and hardnesses are calculated by an extension of Harrison's model as are bond length and bond energy changes. Bond-length relaxation in pseudo-binary alloys is applied to the case of tetrahedral structures and compared to Ga(l-x)In(x)As. Anomalous behavior of Si 2p core-exciton binding energy and line width is explained in SixGe1-x alloys. Finally, correlations between Cd and Zn in Cd(1-x)Zn(x)Te and Hg and Zn in Hg(1-x)Zn(x)Te are calculated.
- Research Organization:
- Santa Barbara Research Center, Goleta, CA (USA)
- OSTI ID:
- 5698739
- Report Number(s):
- AD-A-166795/5/XAB
- Country of Publication:
- United States
- Language:
- English
Similar Records
HgCdTe surface and defect study program. Interim technical Report No. 4, 1 July-31 December 1984
Nanoindentation of HgCdTe prepared by molecular beam epitaxy
HgCdTe surface and defect study program. Interim technical Report No. 5, 31 December 1984-1 July 1985
Technical Report
·
Mon Dec 31 23:00:00 EST 1984
·
OSTI ID:5498579
Nanoindentation of HgCdTe prepared by molecular beam epitaxy
Journal Article
·
Sun Dec 18 23:00:00 EST 2005
· Applied Physics Letters
·
OSTI ID:20706496
HgCdTe surface and defect study program. Interim technical Report No. 5, 31 December 1984-1 July 1985
Technical Report
·
Mon Jul 01 00:00:00 EDT 1985
·
OSTI ID:5498565
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BAND THEORY
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CAPACITANCE
CHALCOGENIDES
CHEMICAL BONDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DENSITY
DIMENSIONS
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
INTERFACES
ION IMPLANTATION
LINE DEFECTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SURFACES
TELLURIDES
TELLURIUM COMPOUNDS
WIDTH
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BAND THEORY
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CAPACITANCE
CHALCOGENIDES
CHEMICAL BONDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DENSITY
DIMENSIONS
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
INTERFACES
ION IMPLANTATION
LINE DEFECTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SURFACES
TELLURIDES
TELLURIUM COMPOUNDS
WIDTH