HgCdTe surface and defect study program. Interim technical Report No. 5, 31 December 1984-1 July 1985

Technical Report · Mon Jul 01 04:00:00 EDT 1985

OSTI ID:5498565

Wilson, J A; Cotton, V A; Silberman, J A; Carey, G P; Shih, C K

Correlations are made between capacitance-voltage measurements of MIS structures formed on horizontal zone-melt-grown HgCdTe (x = 0.3) wafers and the devices proximity to grain boundaries. Large changes in flat-band voltage and hysteresis are seen though the density of interface traps is relatively unaffected. The type and amount of changes seen are sufficient to account for the wafer-to-wafer inconsistencies often seen in C-V measurements. Similar fluctuations in surface properties over epitaxially grown wafers can be attributed to the low angle grain boundaries, which are present acting as undesired interfaces in a similar manner. Interface state structures for the HgCdTe PHOTOX SiO/sub 2/ interface was determined by complex admittance spectroscopy while compositional variations were measured by low-temperature (77k) electroreflectance. Results are also presented of the dependence of capacitance-voltage behavior on planar defect proximity. Deep states due to ion-implant damage were examined with DLTS and atomic profiles measured with SIMS are presented for A1, Mg, Na, Si, P, As, H, Br and Cu. Photoelectron-spectroscopy results are presented of the Ag/HgCdTe interface, e beam induced Hg desorption from a cleaved surface and of the surface that results from Br/sub 2/ based chemical treatments. Several recent theoretical studies of the local structure of semiconductor alloys are also presented.

• Research Organization: Santa Barbara Research Center, Goleta, CA (USA)
• OSTI ID: 5498565
• Report Number(s): AD-A-166794/8/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALLOYS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CAPACITANCE
CHALCOGENIDES
CRYSTAL STRUCTURE
DAMAGE
DENSITY
DESORPTION
ELECTRICAL PROPERTIES
GRAIN BOUNDARIES
HYSTERESIS
INTERFACES
ION IMPLANTATION
LOW TEMPERATURE
MELTING
MERCURY COMPOUNDS
MERCURY TELLURIDES
MICROSTRUCTURE
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SURFACES
TELLURIDES
TELLURIUM COMPOUNDS
ZONE MELTING