HgCdTe surface and defect study program. Interim technical Report No. 4, 1 July-31 December 1984

Technical Report · Tue Jan 01 04:00:00 EST 1985

OSTI ID:5498579

Wilson, J A; Cotton, V A; Silberman, J A; Carey, G P; Shih, C K

This report presents program results for the six-month period ending January 1, 1985. Measurements of MIS storage time at the PHOTOX SiO/sub 2//Hg(0.7)Cd(0.3)Te interface indicate that distributed DLTS of ion-implanted wafers reveal a single bulk trap at E = E sub c - 0.20 eV (E sub g = 0.26 eV at 77k), which is associated with the resultant lattice damage. Continuing studies of the initial stages of oxidation reveal that the reaction occurring at the surface is not directly photon-assisted. Initial PES characterization of the alteration of surface structure and composition by chemical processes is presented. Data showing precise removal of Hg from the surface using an incident electron beam is also presented. An initial study of the reaction chemistry between Ag and A1 and the HgCdTe surface is described. Finally, the sensitivity of defect energy levels in semiconductors to the host band structures and impurity potentials have been studied for approximately 30 impurities in CdTe using four different band structure models.

• Research Organization: Santa Barbara Research Center, Goleta, CA (USA)
• OSTI ID: 5498579
• Report Number(s): AD-A-166793/0/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BEAMS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CARRIER LIFETIME
CHALCOGENIDES
CHEMICAL REACTIONS
ELECTRON BEAMS
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ENERGY LEVELS
INTERFACES
ION IMPLANTATION
LEPTON BEAMS
LIFETIME
MERCURY COMPOUNDS
MERCURY TELLURIDES
MIS TRANSISTORS
OXIDATION
PARTICLE BEAMS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REMOVAL
SEMICONDUCTOR DEVICES
SPECTROSCOPY
SURFACES
TELLURIDES
TELLURIUM COMPOUNDS
TRANSISTORS