Lead-ytterbium-tin telluride heterojunction semiconductor laser

Patent · Tue Mar 18 04:00:00 EST 1986

OSTI ID:5695830

Partin, D L

This patent describes a double heterojunction semiconductor lead salt infrared diode laser. The improvement described here consists of a semiconductive monocrystalline lead salt active region layer of given energy band gap, index of refraction, crystal structure and lattice constant is sandwiched between two semiconductive monocrystalline lead-tin ytterbium salt layers of mutually opposite conductivity type and having an energy band gap significantly higher than, an index of refraction significantly lower than, a crystal structure the same as, and a lattice constant substantially equal to the active region layer, effective to increase layer performance by providing lattice matching among the layers as well as providing carrier and optical confinement with respect to the active region layer.

• Assignee: General Motors Corp., Detroit, MI
• Patent Number(s): US 4577322
• OSTI ID: 5695830
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
DESIGN
ELEMENTS
GRADED BAND GAPS
HETEROJUNCTIONS
JUNCTIONS
LASERS
LAYERS
LEAD
METALS
MONOCRYSTALS
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
RARE EARTHS
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TELLURIDES
TELLURIUM COMPOUNDS
TIN COMPOUNDS
TIN TELLURIDES
YTTERBIUM