Lead-alloy-telluride heterojunction semiconductor laser

Patent · Tue Sep 16 04:00:00 EDT 1986

OSTI ID:5277541

Partin, D L

In a double heterojunction semiconductor lead salt infrared diode laser, the improvement is described wherein a semiconductive monocrystaline lead salt active region layer of given energy band gap, index of refraction, crystal structure and lattice constant is sandwiched between two semiconductive monocrystalline lead salt layers of mutually opposite conductivity type. The layers contain calcium and one element selected from the group consisting of europium and strontium and having an energy band gap significantly higher than, an index of refraction significantly lower than, a crystal structure the same as, and a lattice constant substantially equal to the active region layer, effective to increase laser performance by providing lattice matching among the layers as well as providing at least carrier confinement with respect to the active region layer.

• Assignee: General Motors Corp., Detroit, MI
• Patent Number(s): US 4612644
• OSTI ID: 5277541
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALKALINE EARTH METALS
ALLOYS
CALCIUM
CHALCOGENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
ELEMENTS
EUROPIUM
GRADED BAND GAPS
HETEROJUNCTIONS
JUNCTIONS
LASER MATERIALS
LASERS
LAYERS
LEAD ALLOYS
MATERIALS
METALS
MONOCRYSTALS
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
RARE EARTHS
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STRONTIUM
TELLURIDES
TELLURIUM COMPOUNDS