Double-etching technique for the fabrication of submicron channels on a GaAs wafer and its application to laser fabrication

Journal Article · Sat Mar 01 00:00:00 EST 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327743· OSTI ID:5688881

Chen, C; Wang, S

We demonstrate in this paper a simple, reproducible, uniform, and reliable double-etching technique which enables us to make submicron channels on a GaAs wafer from a photomask of considerably larger dimension. Only conventional photolithographic process and preferential etching are required. The technique consists of stripping the photoresist after a first-step preferential etching and then immersing the wafer back into the etchant to perform the second etching. As a first example, we have applied this technique to the fabrication of a channeled-substrate planar laser using liquid-phase epitaxy. The surface morphology of the LPE layers and the performance of the laser are shown to be of superior quality.

• Research Organization: Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 5688881
• Journal Information: J. Appl. Phys.; (United States), Vol. 51:3
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
ETCHING
SEMICONDUCTOR LASERS
FABRICATION
DATA
EPITAXY
MORPHOLOGICAL CHANGES
PHOTOGRAPHY
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)