Photon-stimulated desorption of fluorine from silicon via substrate core excitations
- Surface Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (US)
Photon-stimulated desorption (PSD) of F{sup +} was performed for silicon (111) surfaces terminated with fluorine atoms. The surfaces were prepared by exposure of clean silicon to XeF{sub 2}. The onset for PSD at the Si 2{ital p} edge correlated with the transition from the 2{ital p} level of the bonding silicon atom to the conduction-band minimum, and was thus a function of the oxidation state of the bonding atom. The ions originating from a SiF surface species desorbed along the surface normal while the ions from a SiF{sub 3} group desorbed in off-normal directions. Localized 3{ital s} and 3{ital p} Rydberg-like resonances were observed in the quasimolecular SiF{sub 3} moieties. The ion kinetic-energy distributions were measured as an aid to elucidating the desorption mechanism. Measurements of the PSD of F{sup +} at the Si 2{ital s} edge were used to confirm the 3{ital s} and 3{ital p} character of the measured resonances.
- OSTI ID:
- 5682891
- Journal Information:
- Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 40:5; ISSN PRBMD; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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