Photon-stimulated desorption as a measure of surface electronic structure

Journal Article · Mon May 01 04:00:00 EDT 1989 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.575917· OSTI ID:6335901

Yarmoff, J A; Joyce, S A

The yield of ions desorbed via excitation of the Si 2p and F 1s levels was measured for fluorine adsorbed on Si(111). These photon-stimulated desorption (PSD) spectra were compared with the absorption measured via secondary or Auger electrons. It was seen that the PSD is dominated by direct excitations, and that the PSD spectra are sensitive to the final-state density at the local atomic site associated with the initial excitation. At the Si 2p edge, the PSD is sensitive to the oxidation state of the bonding silicon atom. At the F 1s edge, it is sensitive to the correspondence between the polarization vector of the incident light and the bond direction. Measurements of the kinetic energies of the desorbed ions were used to ascertain details of the desorption mechanism.

• Research Organization: National Institute of Standards and Technology, Surface Science Division, Gaithersburg, Maryland 20899
• OSTI ID: 6335901
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ADSORPTION
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY LEVELS
ENERGY SPECTRA
FLUORINE
HALOGENS
K SHELL
L SHELL
NONMETALS
P STATES
S STATES
SEMIMETALS
SILICON
SORPTION
SPECTRA
SURFACE PROPERTIES