Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

Journal Article · Fri Sep 01 04:00:00 EDT 1989 · IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA)

DOI:https://doi.org/10.1109/3.35226· OSTI ID:5653844

Zhu, L D; Zheng, B Z ^[1]; Feak, G A.B. ^[2]

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1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (CN)
2. Michigan Univ., Ann Arbor, MI (USA). Dept. of Electrical Engineering and Computer Science

The temperature dependence of the optical gain in GRIN-SCH SQW lasers with different quantum-well widths has been investigated. The observed dependence of the kink temperature on cavity loss and quantum-well width, and the differential quantum efficiency minimum at the kink temperature, have been analyzed in terms of the temperature variation of the gain spectra and peak gain curves. Dependences of the characteristic temperature T/sub 0/ on the quantum-well width, cavity loss, and temperature range are discussed in terms of the variation of the peak modal gain versus current relation with temperature and quantum-well width.

• OSTI ID: 5653844
• Journal Information: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA) Vol. 25:9; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CURRENT DENSITY
EFFICIENCY
GAIN
HETEROJUNCTIONS
JUNCTIONS
LASER CAVITIES
LASERS
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
TEMPERATURE DEPENDENCE