Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structure

Journal Article · Thu Mar 01 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94823· OSTI ID:5151259

Hersee, S D; de Cremoux, B; Duchemin, J P

We describe the characteristics of graded-index separate-confinement heterostructure (GRIN-SCH) quantum well laser structures for a wide range of quantum well thickness and graded layer composition. It was deduced that the ''GRIN'' region enhances carrier confinement and assists the thermalization of carriers into the quantum well. A maximum value of T/sub 0/ of 190 K was measured for these single quantum well lasers.

• Research Organization: Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, BP N 10, 91401 Orsay, France
• OSTI ID: 5151259
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
LOW TEMPERATURE
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
POTENTIALS
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT