Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling

Journal Article · Mon Sep 11 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101713· OSTI ID:5650138

Ahrenkiel, R K; Dunlavy, D J; Keyes, B ^[1]; Vernon, S M; Dixon, T M; Tobin, S P ^[2]; Miller, K L; Hayes, R E ^[3]

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1. Solar Energy Research Institute, Golden, Colorado 80401 (US)
2. Spire Corporation, Bedford, Massachusetts 01730
3. Department of Electrical and Computer Engineering, University of Colorado, Boulder, Colorado 80303

The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

• OSTI ID: 5650138
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:11; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CHARGE CARRIERS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
DIMENSIONS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LIFETIME
LUMINESCENCE
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SURFACE COATING
THICKNESS
THIN FILMS
VAPOR DEPOSITED COATINGS