Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

Petluru, Priyanka; Grant, Perry C.; Muhowski, Aaron J.; Obermeier, Isabella M.; Milosavljevic, Marko S.; Johnson, Shane R.; Wasserman, Daniel; Steenbergen, Elizabeth H.; Webster, Preston T.

doi:10.1063/5.0007275

Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

Journal Article · Tue Aug 11 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0007275· OSTI ID:1647118

; Grant, Perry C.; ; ; Milosavljevic, Marko S.; ; ; ; Webster, Preston T.

Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

OSTI ID:: 1647118

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 117; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (23)

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs Riordan, Nathaniel A.; Gogineni, Chaturvedi; Johnson, Shane R. Journal of Materials Science: Materials in Electronics, Vol. 23, Issue 10 https://doi.org/10.1007/s10854-012-0665-1	journal	March 2012
Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe Rhiger, David R. Journal of Electronic Materials, Vol. 40, Issue 8 https://doi.org/10.1007/s11664-011-1653-6	journal	May 2011
Photoluminescence of infrared‐sensing materials using an FTIR spectrometer Reisinger, A. R.; Roberts, R. N.; Chinn, S. R. Review of Scientific Instruments, Vol. 60, Issue 1 https://doi.org/10.1063/1.1140582	journal	January 1989
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix Pettinari, G.; Polimeni, A.; Capizzi, M. Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2953176	journal	June 2008
Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy Fang, Z. M.; Ma, K. Y.; Cohen, R. M. Journal of Applied Physics, Vol. 68, Issue 3 https://doi.org/10.1063/1.346715	journal	August 1990
Temperature dependence of the Urbach edge in GaAs Johnson, S. R.; Tiedje, T. Journal of Applied Physics, Vol. 78, Issue 9 https://doi.org/10.1063/1.359683	journal	November 1995
Composition of AlGaAs Wasilewski, Z. R.; Dion, M. M.; Lockwood, D. J. Journal of Applied Physics, Vol. 81, Issue 4 https://doi.org/10.1063/1.364012	journal	February 1997
Effects of rapid thermal annealing on GaAs _1-x Bi _x alloys Mohmad, A. R.; Bastiman, F.; Hunter, C. J. Applied Physics Letters, Vol. 101, Issue 1 https://doi.org/10.1063/1.4731784	journal	July 2012
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4749842	journal	August 2012
Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms Höglund, L.; Ting, D. Z.; Soibel, A. Applied Physics Letters, Vol. 105, Issue 19 https://doi.org/10.1063/1.4902022	journal	November 2014
Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry Webster, P. T.; Riordan, N. A.; Liu, S. Applied Physics Letters, Vol. 106, Issue 6 https://doi.org/10.1063/1.4908255	journal	February 2015
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy Webster, P. T.; Riordan, N. A.; Liu, S. Journal of Applied Physics, Vol. 118, Issue 24 https://doi.org/10.1063/1.4939293	journal	December 2015
Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices Webster, P. T.; Shalindar, A. J.; Riordan, N. A. Journal of Applied Physics, Vol. 119, Issue 22 https://doi.org/10.1063/1.4953027	journal	June 2016
Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction Shalindar, A. J.; Webster, P. T.; Wilkens, B. J. Journal of Applied Physics, Vol. 120, Issue 14 https://doi.org/10.1063/1.4964799	journal	October 2016
Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy Webster, Preston T.; Shalindar, Arvind J.; Schaefer, Stephen T. Applied Physics Letters, Vol. 111, Issue 8 https://doi.org/10.1063/1.4994847	journal	August 2017
Auger losses in dilute InAsBi Hader, J.; Badescu, S. C.; Bannow, L. C. Applied Physics Letters, Vol. 112, Issue 19 https://doi.org/10.1063/1.5022775	journal	May 2018
Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy Kosireddy, R. R.; Schaefer, S. T.; Shalindar, A. J. Journal of Applied Physics, Vol. 126, Issue 9 https://doi.org/10.1063/1.5096795	journal	September 2019
Molecular beam epitaxy growth and optical properties of InAsSbBi Schaefer, S. T.; Kosireddy, R. R.; Webster, P. T. Journal of Applied Physics, Vol. 126, Issue 8 https://doi.org/10.1063/1.5098809	journal	August 2019
HgCdTe infrared detector material: history, status and outlook Rogalski, A. Reports on Progress in Physics, Vol. 68, Issue 10 https://doi.org/10.1088/0034-4885/68/10/R01	journal	August 2005
Intensity- and Temperature-Dependent Carrier Recombination in InAs / In As 1 − x S b x Type-II Superlattices Olson, B. V.; Kadlec, E. A.; Kim, J. K. Physical Review Applied, Vol. 3, Issue 4 https://doi.org/10.1103/PhysRevApplied.3.044010	journal	April 2015
Temperature dependence of the dielectric function of germanium Viña, L.; Logothetidis, S.; Cardona, M. Physical Review B, Vol. 30, Issue 4 https://doi.org/10.1103/PhysRevB.30.1979	journal	August 1984
Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices Webster, Preston T.; Riordan, Nathaniel A.; Gogineni, Chaturvedi Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2 https://doi.org/10.1116/1.4868111	journal	March 2014
Spectrally resolved localized states in GaAs ₁₋ _x Bi _x Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A. Japanese Journal of Applied Physics, Vol. 56, Issue 3 https://doi.org/10.7567/JJAP.56.035801	journal	February 2017

Similar Records

Enhanced minority carrier lifetime in bulk hydrogen-passivated InAsSbBi

Journal Article · Sun Jan 07 23:00:00 EST 2024 · Applied Physics Letters · OSTI ID:2582125

Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 μm

Journal Article · Mon Feb 10 19:00:00 EST 2025 · Journal of Applied Physics · OSTI ID:2584384

Demonstration of a 4.32 μ m cutoff InAsSbBi n B n photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing

Journal Article · Sun Jul 30 20:00:00 EDT 2023 · Applied Physics Letters · OSTI ID:2422543

Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

Citation Formats

References (23)

Similar Records

Related Subjects