In situ TEM observations of heavy ion damage in gallium arsenide
Conference
·
OSTI ID:5649449
Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion Accelerator Facility at Argonne National Laboratory. The ion bombardments (50 keV Ar/sup +/ and Kr/sup +/) and the microscopy have been carried out at temperatures ranging from 30 to 300/sup 0/K. Ion fluences ranged from 2 x 10/sup 11/ to 5 x 10/sup 13/ ions cm/sup -2/. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30/sup 0/K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250/sup 0/K. Post-implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears. 14 refs., 3 figs., 1 tab.
- Research Organization:
- Illinois Univ., Urbana (USA). Dept. of Materials Science and Engineering; Argonne National Lab., IL (USA)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 5649449
- Report Number(s):
- CONF-871124-77; ON: DE88005984
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
CRYSTALLIZATION
ELECTRON MICROSCOPY
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION BEAMS
IONS
KEV RANGE
KEV RANGE 10-100
KRYPTON IONS
MATERIALS
MICROSCOPY
N-TYPE CONDUCTORS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
TEMPERATURE EFFECTS
VERY LOW TEMPERATURE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
CRYSTALLIZATION
ELECTRON MICROSCOPY
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION BEAMS
IONS
KEV RANGE
KEV RANGE 10-100
KRYPTON IONS
MATERIALS
MICROSCOPY
N-TYPE CONDUCTORS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
TEMPERATURE EFFECTS
VERY LOW TEMPERATURE