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Computer simulation of high resolution transmission electron micrographs: theory and analysis

Technical Report ·
DOI:https://doi.org/10.2172/5649044· OSTI ID:5649044

Computer simulation of electron micrographs is an invaluable aid in their proper interpretation and in defining optimum conditions for obtaining images experimentally. Since modern instruments are capable of atomic resolution, simulation techniques employing high precision are required. This thesis makes contributions to four specific areas of this field. First, the validity of a new method for simulating high resolution electron microscope images has been critically examined. Second, three different methods for computing scattering amplitudes in High Resolution Transmission Electron Microscopy (HRTEM) have been investigated as to their ability to include upper Laue layer (ULL) interaction. Third, a new method for computing scattering amplitudes in high resolution transmission electron microscopy has been examined. Fourth, the effect of a surface layer of amorphous silicon dioxide on images of crystalline silicon has been investigated for a range of crystal thicknesses varying from zero to 2 1/2 times that of the surface layer.

Research Organization:
Lawrence Berkeley Lab., CA (USA); California Univ., Berkeley (USA). Dept. of Physics
DOE Contract Number:
AC03-76SF00098
OSTI ID:
5649044
Report Number(s):
LBL-19058; ON: DE85013927
Country of Publication:
United States
Language:
English