FIM/IAP/TEM studies of ion implanted nickel emitters

Journal Article · Mon Dec 31 23:00:00 EST 1984 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:5635574

Walck, S D; Hren, J J

Accurate depth profiling of implanted hydrogen and its isotopes in metals is extremely important. Field ion microscopy and atom-probe techniques provide the most accurate depth profiling analytical method of any available. In addition, they are extremely sensitive to hydrogen. This paper reports our early work on hydrogen trapping at defects in metals using the Field Ion Microscope/Imaging Atom Probe (FIM/IAP). Our results deal primarily with the control experiments required to overcome instrumental difficulties associated with in situ implantation and the influence of a high electric field. Transmission Electron Microscopy (TEM) has been used extensively to independently examine the influence of high electric fields on emitters. 11 references, 7 figures.

• Research Organization: Univ. of Florida, Gainesville
• DOE Contract Number: AS05-83ER45039
• OSTI ID: 5635574
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 41; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ELECTRIC FIELDS
ELEMENTS
HYDROGEN
ION IMPLANTATION
ION MICROSCOPY
IRON
METALS
MICROSCOPY
NICKEL
NONMETALS
TRANSITION ELEMENTS
TRAPPING