Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High critical current densities in epitaxial YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films on silicon-on-sapphire

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.104864· OSTI ID:5622733
 [1]; ;  [2];  [3];  [4];  [1]
  1. Department of Applied Physics, Stanford University, Stanford, California 94305 (USA)
  2. Xerox Palo Alto Research Center, Palo Alto, California 94304 (USA)
  3. Conductus, Inc., Sunnyvale, California 94086 (USA)
  4. AT T Bell Laboratories, Murry Hill, New Jersey 07974 (USA)
The use of silicon on sapphire (SOS) as a substrate for YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} allows the growth of thick ({similar to}4000 A) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6{times}10{sup 6} A/cm{sup 2} at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.
OSTI ID:
5622733
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 58:21; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English