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High critical currents in strained epitaxial YBa sub 2 Cu sub 3 O sub 7 minus. delta. on Si

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104225· OSTI ID:6483250
 [1];  [2];  [3];  [4]; ;  [5];  [6]
  1. Xerox Palo Alto Research Center, Palo Alto, CA (USA) Department of Applied Physics, Stanford University, Stanford, CA (USA)
  2. Xerox Palo Alto Research Center, Palo Alto, CA (USA) Physics Department, Santa Clara University, Santa Clara, CA (USA)
  3. Conductus, Inc., Sunnyvale, CA (USA)
  4. AT T Bell Laboratories, Murray Hill, NJ (USA)
  5. Xerox Palo Alto Research Center, Palo Alto, CA (USA)
  6. Department of Applied Physics, Stanford University, Stanford, CA (USA)
Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) films were grown on Si (100) using an intermediate buffer layer of yttria-stabilized zirconia. Both layers are grown via an entirely {ital in} {ital situ} process by pulsed laser deposition. All films consist of {ital c}-axis oriented grains as measured by x-ray diffraction. Strain results from the large difference in thermal expansion coefficients between Si and YBCO. Thin ({lt}500 A) YBCO films are unrelaxed and under tensile strain with a distorted unit cell. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12%. The normal-state resistivity is 280 {mu}{Omega} cm at 300 K; the critical temperature {ital T}{sub {ital c}} ({ital R}=0) is 86--88 K with a transition width ({Delta}{Tc}) of 1 K. Critical current densities of 2{times}10{sup 7} A/cm{sup 2} at 4.2 K and 2.2{times}10{sup 6} A/cm{sup 2} at 77 K have been achieved.
OSTI ID:
6483250
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:11; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English