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YBa sub 2 Cu sub 3 O sub 7 minus x to Si interconnection for hybrid superconductor/ semiconductor integration

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.108275· OSTI ID:7028245
; ; ; ;  [1]
  1. Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, Colorado 80303 (United States)

We have successfully made low resistance contacts between high-quality films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) and single-crystal Si substrates through Ag-Au interconnections. The YBCO films were deposited by laser ablation on an epitaxial yttria-stabilized zirconia buffer layer on Si and had zero-resistance critical temperatures of 83--85 K after patterning into lines. Specific contact resistivities (resistance-area products) of the YBCO to Si interconnection, limited by the Au to Si interface, of 10{sup {minus}6} {Omega} cm{sup 2} were achieved on heavily doped Si after deposition and patterning of the YBCO film. This demonstrates the use of high-temperature superconductors as a wiring layer compatible with conventional Si metal-oxide-semiconductor processing.

DOE Contract Number:
AI05-89ER14044
OSTI ID:
7028245
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 61:18; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English