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Title: Epitaxial YBa sub 2 Cu sub 3 O sub x thin films on sapphire using a Y-stabilized ZrO sub 2 buffer layer

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.105972· OSTI ID:5691481
; ; ;  [1]; ;  [2]
  1. Siemens AG, Corporate Research and Development, 8000 Muenchen 83, Germany (DE)
  2. Siemens AG, Corporate Research and Development, 8520 Erlangen, Germany (DE)

Epitaxial, {ital c}-oriented YBa{sub 2}Cu{sub 3}O{sub {ital x}} thin films were deposited by dc sputtering on (1{bar 1}02)-sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO{sub 2} (YSZ), which was grown by rf magnetron sputtering. The epitaxy of the YSZ and the YBa{sub 2}Cu{sub 3}O{sub {ital x}} films was proved by Rutherford backscattering spectrometry combined with ion channeling. The YBa{sub 2}Cu{sub 3}O{sub {ital x}} films exhibited transition temperatures of 90 K and had critical current densities exceeding 1.2{times}10{sup 6} A/cm{sup 2} at 77 K in zero magnetic field.

OSTI ID:
5691481
Journal Information:
Applied Physics Letters; (USA), Vol. 59:2; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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