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Title: In situ fabrication of epitaxial YBa sub 2 Cu sub 3 O sub 7 films on lattice-mismatched (100) YS-ZrO sub 2 substrates by the pulsed laser evaporation method

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.345333· OSTI ID:6862452
; ;  [1]
  1. Department of Materials Science Department of Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916 (USA)

The formation of good quality epitaxial {ital c}-axis-perpendicular YBa{sub 2} Cu{sub 3} O{sub 7} superconducting thin films on (100) yttria-stabilized-zirconia (YSZ) substrates in the temperature range of 550--650 {degree}C by a biased laser deposition method is reported. However, below 550 {degree}C, the epitaxial quality of the films decreased appreciably with corresponding changes in the superconducting properties. For temperatures much below the critical temperature, the critical current density showed a linear variation with temperature, with a value of 1.0{times}10{sup 6} A/cm{sup 2} at 77 K and zero magnetic field. Because of the lattice mismatch between the substrate and the film, the interface was found to be highly strained in the presence of a large number of defects. The epitaxial nature and the crystalline quality of the films were determined by a number of techniques including Rutherford backscattering/channeling, electron channeling, cross-section transmission electron microscopy (TEM), and x-ray diffraction techniques. Rutherford backscattering channeling showed a minimum channeling yield of about 18%--25% for films deposited at and above 550 {degree}C. Cross-section TEM and x-ray diffraction revealed the following thin film and substrate relationships: (001){sub film} {parallel}(001){sub YSZ} and (110){sub film} {parallel}(100){sub YSZ}. The electron channeling pattern taken from a large area confirmed the epitaxial relationship. The lattice parameters mismatch in this orientation has been found to gives rise to stresses near the interface.

OSTI ID:
6862452
Journal Information:
Journal of Applied Physics; (USA), Vol. 67:7; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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