Dependence of threshold current on the number of wells in AlGaAs-GaAs quantum well lasers

Journal Article · Thu Aug 01 00:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96213· OSTI ID:5618324

Blood, P; Fletcher, E D; Woodbridge, K

GaAs-AlGaAs multiple quantum well injection lasers have been grown by molecular beam epitaxy with different numbers (N) of uncoupled GaAs wells 25 A wide symmetrically disposed about the center of a 4000-A-wide waveguide. The devices emit at about 770 nm and for N = 4 the broad area threshold current density is 1.1 kA cm/sup -2/. The threshold current increases with increasing N (2<40) and this can be accounted for by changes in the optical confinement factor and the active ''volume,'' which implies that changes in capture probability with N in this structure are small.

• Research Organization: Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
• OSTI ID: 5618324
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 47:3
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
ALUMINIUM ARSENIDES
CURRENT DENSITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)