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U.S. Department of Energy
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Cadmium sulfide/copper sulfide heterojunction cell research. Technical progress report, February 26-May 31, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5598845· OSTI ID:5598845
All vacuum deposition process Au/Cu/sub 2/S/Cd/sub 1-x/Zn/sub x/S/Nb photovoltaic cells have been fabricated by sequentially sputtering (1) Nb in Ar, (2) Cd/sub 1-x/Zn/sub x/, and then (3) Cu in H/sub 2/S and Ar gas mixtures, and finally, in a separate operation, (4) Au in Ar. Photovoltaic response of as-deposited junctions (i.e., without subsequent heat treatment) is obtained with appropriate deposition parameters. Resistivity of CdS or Cd/sub 0/ /sub 9/Zn/sub 0/ /sub 1/S films is controlled by sputtering from In-doped metal cathodes. Junction characteristics are strongly influenced by deep trap levels on the Cd/sub 1-x/Zn/sub x/S side of the heterojunction. A trap level at E/sub t/ approx. = 0.37 eV below the conduction band edge has been identified in sputter deposited CdS by admittance spectroscopy.
Research Organization:
Lockheed Missiles and Space Co., Palo Alto, CA (USA). Lockheed Palo Alto Research Lab.
OSTI ID:
5598845
Report Number(s):
DSE-1459-T1; LMSC-D-676741
Country of Publication:
United States
Language:
English