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U.S. Department of Energy
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Cadmium sulfide/copper sulfide heterojunction cell research. Final report, February 26, 1979-May 31, 1980

Technical Report ·
DOI:https://doi.org/10.2172/5116352· OSTI ID:5116352
Several all-sputter-deposited Cu/sub 2/S/CdS cells have been prepared to date with J/sub SC/ approx. = 3 mA/cm/sup 2/ under simulated AM 1 illumination. The best AM 1 conversion efficiency obtained is 0.6%. This is typical of sputtered CdS in Cu/sub 2/S/CdS cells investigated to date. The sputtered Cu/sub 2/S appears to be satisfactory for solar cell applications. Present evidence indicates that the poor conversion efficiency is due to a low-junction electric field intensity on the CdS side of the heterojunction. A multilayedr CdS structure has been developed which may allow the tailoring of the junction electric field intensity to a selected high value to obtain high-junction collection efficiency. Hybrid process cells consisting of sputter-deposited CdS with conventional dry processed Cu/sub 2/S were also prepared. The best of these cells exhibited a short-circuit current density of 6.9 mA/cm/sup 2/ and a conversion efficiency of 1.18%.
Research Organization:
Lockheed Missiles and Space Co., Palo Alto, CA (USA). Lockheed Palo Alto Research Lab.
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5116352
Report Number(s):
LMSC-D-766341
Country of Publication:
United States
Language:
English