Cadmium sulfide/copper sulfide heterojunction cell research by sputter deposition. Quarterly technical progress report, December 1, 1980-February 28, 1981

Technical Report · Fri Apr 03 04:00:00 EST 1981

DOI:https://doi.org/10.2172/6325934· OSTI ID:6325934

Thornton, J. A.; Anderson, W. W.; Meakin, J. D.

Photoluminescence spectral measurements on 6000 nm thick reactive sputtered CdS coatings have yielded exciton and green edge emission spectra which are similar in their general character to those recorded from the evaporated CdS that yields high performance cells. The photoluminescence spectra of the sputtered coatings will be correlated with the performance of these materials when used for cells. All-sputter-deposited cells with composite doped and undoped CdS layers have yielded J/sub sc/ approx. 3 mA/cm/sup 2/. This is the highest J/sub sc/ that has been achieved for cells with this structure, which is designed to increase the junction electric field. A hybrid cell with sputtered Cu/sub 2/S deposited onto evaporated CdS supplied by IEC has yielded J/sub sc/ approx. 18 mA/cm/sup 2/ (under illumination of 87.5 mW/cm/sup 2/), V/sub oc/ 0.47V, FF = 0.60, and eta = 5.74% with no AR coating. Cu/sub 2/S reactive sputtering experiments have further elucidated the influence of cathode and wall conditioning on the deposition process. CdS reactive sputtering experiments using a planar magnetron source have been initiated. Data are reported on the dependence of the deposition rate and coating resistivity on the substrate temperature and H/sub 2/S injection rate. The planar magnetron data are generally consistent with data previously reported for CdS reactive sputtering using cylindrical-post magnetrons. The resistivities of CdS coatings deposited using the planar magnetron are typicaly a factor of from three to ten lower than for coatings deposited using the cylindrical magnetrons. An analysis is reported which relates the frequency dispersion observed in C-V measurements on CdS/Cu/sub 2/S solar cells to the surface resistivity of the Cu/sub 2/S layer.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA); TELIC Corp., Santa Monica, CA (USA); Lockheed Palo Alto Research Labs., CA (USA); Delaware Univ., Newark (USA). Inst. of Energy Conversion
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6325934
• Report Number(s): SERI/PR-9296-T1; ON: DE81026219
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CAPACITANCE
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SULFIDES
CURRENT DENSITY
DATA
DESIGN
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
EVAPORATION
EXPERIMENTAL DATA
FABRICATION
FILL FACTORS
HETEROJUNCTIONS
INFORMATION
INORGANIC PHOSPHORS
JUNCTIONS
LUMINESCENCE
MAGNETRONS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NUMERICAL DATA
OPTIMIZATION
PERFORMANCE TESTING
PHASE TRANSFORMATIONS
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOLUMINESCENCE
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
SULFIDES
SULFUR COMPOUNDS
TESTING
TRANSITION ELEMENT COMPOUNDS
VACUUM EVAPORATION