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U.S. Department of Energy
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Cadmium sulfide/copper sulfide heterojunction cell research. Technical progress report, September 1-November 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5227865· OSTI ID:5227865
Several all sputter deposited Cu/sub 2/S/CdS cells have been prepared to date with J/sub SC/ approx. = 3 mA/cm/sup 2/ under simulated AM1 illumination. The best AM1 conversion efficiency obtained is 0.6%. This is shown to be typical of sputtered CdS in Cu/sub 2/S/CdS cells investigated to date. The sputtered Cu/sub 2/S appears to be satisfactory for solar cell applications. Presented evidence indicates that the poor conversion efficiency is due to a low-junction electric field intensity on the CdS side of the heterojunction. A multilayer CdS structure has been developed which may allow the tailoring of the junction electric field intensity to a selected high value to obtain high-junction collection efficiency. Other areas of cell development advances included: (1) determination of effect of Cu cones in Cu/sub 2/S on Cu/sub 2/S/CdS cell performance; (2) solution of CdS pinhole problem; and (3) open circuit voltage improvement by heat treatment.
Research Organization:
Lockheed Missiles and Space Co., Palo Alto, CA (USA). Research Labs.
DOE Contract Number:
EG-77-C-01-4042
OSTI ID:
5227865
Report Number(s):
DSE-8033-1/3; LMSC-D-682102
Country of Publication:
United States
Language:
English