The study and manufacture of Ga-Al-As double heterojunction laser diodes emitting in the visible spectrum (in French)
Semiconductor diode lasers emitting in the visible bands, constructed through liquid phase epitaxial (LPE) techniques, are reported, together with a theoretical model of the lasing processes. A methodology is developed for determining the threshold currents of diode lasers in order to evaluate the performances of different structures under continuous excitation and to analyze the performance of the laser components. The construction of heterojunction laser diodes made from GaAlAs materials depends on assuring a sufficient Al concentration near the donors which emit visible light. Analysis of the active zone demonstrates that the current threshold for making GaAlAs devices emit in the visible is 4-5 times that required for emission in the IR. The aluminum concentration can be varied between 10-30 percent and still allow emissions at 704 nm with a threshold current density of 4 kA/sq cm. Increasing the aluminum content in the active zone augments the optical oscillation gain in the laser cavity. The 700 nm wavelength level was found to be a lower bound, below which injection efficiencies, electron carrier confinement, and optical guidance in the cavity become problematical.
- OSTI ID:
- 5594608
- Country of Publication:
- United States
- Language:
- French
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER CAVITIES
LASERS
LIQUID PHASE EPITAXY
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD ENERGY