Low series resistance vertical-cavity front-surface-emitting laser diode

Journal Article · Mon May 14 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103029· OSTI ID:7149804

Yoo, H; Hayes, J R; Andreadakis, N; Paek, E G; Chang, G K; Harbison, J P; Florez, L T ^[1]; Kwon, Y ^[2]

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1. Bellcore, Red Bank, New Jersey 07701-7040 (USA)
2. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Cheongryang, P. O. Box 150, Seoul (Korea)

We have fabricated a front-surface-emitting laser diode (FSELD) using a technique which relies on a double ion implant of oxygen and beryllium. The laser had a low operating voltage at the lasing threshold, a low series resistance, and a relatively small threshold current of 6 mA for a 25-{mu}m-diam device. The lasing wavelength was 971 nm and the spectral width above threshold was 5 A. Since the light comes from the front surface of the wafer, the fabrication technique described here for realizing a FSELD can be used for the fabrication of vertical-cavity visible surface-emitting lasers.

• OSTI ID: 7149804
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:20; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT