Evidence for bifurcation and universal chaotic behavior in nonlinear semiconducting devices
Bifurcations, chaos, and extensive periodic windows in the chaotic regime are observed for a driven LRC circuit, the capacitive element being a nonlinear varactor diode. Measurements include power spectral analysis; real time amplitude data; phase portraits; and a bifurcation diagram, obtained by sampling methods. The effects of added external noise are studied. These data yield experimental determinations of several of the universal numbers predicted to characterize nonlinear systems having this route to chaos.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5592381
- Report Number(s):
- LBL-13719; ON: DE82011106
- Country of Publication:
- United States
- Language:
- English
Similar Records
Evidence for universal chaotic behavior of a driven nonlinear oscillator
Observation of chaotic behavior in an electron-hole plasma in Ge
Chaotic behavior in nonlinear polarization dynamics
Journal Article
·
Sun Mar 14 23:00:00 EST 1982
· Phys. Rev. Lett.; (United States)
·
OSTI ID:5497327
Observation of chaotic behavior in an electron-hole plasma in Ge
Journal Article
·
Sun Mar 18 23:00:00 EST 1984
· Phys. Rev. Lett.; (United States)
·
OSTI ID:6999026
Chaotic behavior in nonlinear polarization dynamics
Conference
·
Sat Dec 31 23:00:00 EST 1988
·
OSTI ID:5592289