Carrier-lifetime control of photochemical dry etching using elevated impurity concentrations

Journal Article · Mon Sep 11 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101678· OSTI ID:5574468

Ashby, C I.H.; Myers, D R; Vawter, G A; Biefeld, R M ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (US)

Virtually total suppression of carrier-driven photochemical etching of semi-insulating GaAs, {ital n}-GaAs, and {ital n}{sup +}-GaAs has been achieved by indiffusion of Zn to a surface carrier concentration greater than 10{sup 20}/cm{sup 3}. This technique for photochemical reaction suppression can be used as a self-aligned etching technology for semiconductor device fabrication.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5574468
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:11; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CARRIER LIFETIME
CHEMISTRY
DATA
DIFFUSION
ELEMENTS
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INFORMATION
LIFETIME
METALS
NUMERICAL DATA
PHOTOCHEMISTRY
PNICTIDES
SURFACE FINISHING
ZINC