Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage
We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl/sub 2/ gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov--Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes.
- Research Organization:
- Bell Communications Research, Red Bank, New Jersey 07701
- OSTI ID:
- 5572791
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 51:25
- Country of Publication:
- United States
- Language:
- English
Similar Records
Narrow conducting channels defined by helium ion beam damage
Dry etching induced damage on vertical sidewalls of GaAs channels
Related Subjects
ALUMINIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
GALLIUM ARSENIDES
ARGON IONS
CHLORINE
COLLISIONS
COUPLING
ELECTRON BEAMS
ELECTRON GAS
ETCHING
HALL EFFECT
ION CHANNELING
ION COLLISIONS
THIN FILMS
WIRES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHANNELING
CHARGED PARTICLES
ELEMENTS
FILMS
FLUIDS
GALLIUM COMPOUNDS
GASES
HALOGENS
IONS
LEPTON BEAMS
NONMETALS
PARTICLE BEAMS
PNICTIDES
RADIATION EFFECTS
SURFACE FINISHING
360605* - Materials- Radiation Effects