Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers

Journal Article · Mon Sep 18 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101686· OSTI ID:5572030

Blood, P; Kucharska, A I; Foxon, C T; Griffiths, K ^[1]

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1. Philips Research Laboratories, Redhill, Surrey RH1 5HA, England (GB)

Using quantum well laser devices with a window in the {ital p}-type contact, we have measured the relative change of spontaneous emission intensity at threshold with temperature for 58-A-wide GaAs wells. Over the range 250--340 K the data are in good agreement with the linear relation obtained from a gain-current calculation which includes transition broadening. This linear behavior contrasts with the stronger temperature dependence of the total measured threshold current of the same devices which includes nonradiative barrier recombination processes.

• OSTI ID: 5572030
• Journal Information: Applied Physics Letters; (USA), Vol. 55:12; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
OPERATION
ALUMINIUM ARSENIDES
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
HIGH TEMPERATURE
MEDIUM TEMPERATURE
RECOMBINATION
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
THRESHOLD ENERGY
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ENERGY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)