Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

Journal Article · Mon Aug 01 04:00:00 EDT 1988 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.7090· OSTI ID:6742482

Blood, P; Colak, S; Kucharska, A I

The authors have calculated gain spectra and gain-current relations for GaAs-AlGaAs quantum well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transmission broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum well layers. Using reasonable values of the parameters describing these effects, the model predicts correctly the observed lengthening of the laser emission wavelength with respect to the absorption edge and correctly describes the variation of this wavelength, which they have observed for a set of devices with different numbers of quantum wells and the same well width. For a single GaAs quantum well laser 25 A wide, with the same parameters, the model predicts an increase in threshold current by a factor of 2.5 compared to an ideal quantum well without these effects.

• Research Organization: Philips Research Labs., Redhill, Surrey, RH1 5HA (GB)
• OSTI ID: 6742482
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
99 GENERAL AND MISCELLANEOUS
990230 -- Mathematics & Mathematical Models-- (1987-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
EFFICIENCY
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MANY-BODY PROBLEM
MATHEMATICAL MODELS
PARAMETRIC ANALYSIS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
TECHNOLOGY ASSESSMENT