Polysilane positive photoresist materials and methods for their use

Patent · Tue May 13 00:00:00 EDT 1986

OSTI ID:5571597

Harrah, L A; Zeigler, J M

A polysilane is described which is substantially free of low molecular weight oligomers or cyclic materials and which comprises recurring units of -Si(X)(Y)- wherein X and Y together have 4-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, substituted phenyl, 1- or 2-naphthyl, or phenylalkyl, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, wherin X and Y groups which are not H can optionally be substituted by one of C/sub 1-6/-alkoxy, mono- or di-(C/sub 1-3/-alkyl)amino, C/sub 2-6/-alkanoyl or the corresponding C/sub 2-3/-ketal thereof, C/sub 1-6/-alkyl, -NH/sub 2/ or -OH; with the proviso that only one of X and Y can be substituted phenyl, and wherein, as a result of the selection of X and Y, the polysilane has sufficient photosensitivity to depolymerize upon exposure to actinic radiation forming products which volatilize.

• Assignee: Dept. of Energy, Washington, DC
• Patent Number(s): US 4588801
• OSTI ID: 5571597
• Resource Relation: Patent File Date: Filed date 5 Apr 1984
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILANES
PHOTOCONDUCTIVITY
CHEMICAL COMPOSITION
DEPOLYMERIZATION
EVAPORATION
PHOTOCONDUCTORS
PHOTOSENSITIVITY
CHEMICAL REACTIONS
DECOMPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SENSITIVITY
SILICON COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties