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Nuclear microprobe imaging of single-event upsets

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.120129· OSTI ID:5565863
; ;  [1]
  1. Sandia National Lab., Albuquerque, NM (US)
+ Show Author Affiliations

This paper reports on an imaging technique that has been developed which produces micron-resolution maps of where single-event upsets occur during ion irradiation of integrated circuits. From these upset images the identity and size of a circuit's upset-prone components can be directly determined. Utilizing a scanning nuclear microprobe, this imaging technique selectively exposes the lowest functional units of an integrated circuit (e.g., transistor drains, gates) and immediately measures the effect of a high-energy ion strike on circuit performance. Information about an integrated circuit's radiation hardness (i.e., total dose response and threshold upset LET), which has previously been acquired at the circuit level, can also be measured at the individual transistor level. Such detailed spatial characterization provides a new, precision diagnostic technique with which to study single-event upset processes in integrated circuits.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
5565863
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 39:1; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
440600* -- Optical Instrumentation-- (1990-)
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
47 OTHER INSTRUMENTATION
CHARGED PARTICLES
DIAGNOSTIC TECHNIQUES
DOSE RATES
ELECTRONIC CIRCUITS
ENERGY
FABRICATION
HARDENING
HIGH ENERGY PHYSICS
IMAGE PROCESSING
IMAGES
INTEGRATED CIRCUITS
IONS
IRRADIATION
MICROELECTRONIC CIRCUITS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
PHYSICS
PROCESSING
RADIATION EFFECTS
RADIATION HARDENING
RESOLUTION
THRESHOLD ENERGY